pzt 3904 1 oct-13-1999 npn silicon switching transistor ? high dc current gain: 0.1ma to 100ma ? low collector-emitter saturation voltage ? complementary type: pzt 3906 (pnp) vps05163 1 2 3 4 type marking pin configuration package pzt 3904 zt 3904 1 = b 2 = c 3 = e 4 = c sot-223 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 40 v collector-base voltage 60 v cbo 6 emitter-base voltage v ebo dc collector current i c 200 ma total power dissipation , t s = 72 c p tot w 1.5 150 junction temperature t j c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 122 k/w junction - soldering point r thjs 52 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
pzt 3904 2 oct-13-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics v (br)ceo collector-emitter breakdown voltage i c = 1 ma, i b = 0 40 - - v collector-base breakdown voltage i c = 10 a, i b = 0 - v (br)cbo 60 - emitter-base breakdown voltage i e = 10 a, i c = 0 - - 6 v (br)ebo i cbo - collector cutoff current v cb = 30 v, i e = 0 50 na - i cev - - 50 collector-emitter cutoff current v ce = 30 v, - v be = 0.5 v i bev base-emitter cutoff current v ce = 30 v, - v be = 0.5 - - 50 h fe 40 70 100 60 30 dc current gain 1) i c = 0.1 ma, v ce = 1 v i c = 1 ma, v ce = 1 v i c = 10 ma, v ce = 1 v i c = 50 ma, v ce = 1 v i c = 100 ma, v ce = 1 v - - 300 - - - - - - - - v cesat - - - - v collector-emitter saturation voltage1) i c = 10 ma, i b = 1 ma i c = 50 ma, i b = 5 ma 0.2 0.3 v besat base-emitter saturation voltage 1) i c = 100 ma, i b = 1 ma i c = 50 ma, i b = 5 ma - - - - 0.85 0.9 1) pulse test: t 300 s, d = 2%
pzt 3904 3 oct-13-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit max. min. typ. ac characteristics f t 300 transition frequency i c = 10 ma, v ce = 20 v, f = 100 mhz - mhz - c cb - - pf 4 collector-base capacitance v cb = 5 v, f = 1 mhz c eb emitter-base capacitance v eb = 0.5 v, f = 1 mhz - - 8 f - noise figure i c = 100 a, v ce = 5 v, r s = 1 k ? , f = 10hz to 15.7khz, 5 - db h 11e 1 10 short-circuit input impedance i c = 1 ma, v ce = 10 v, f = 1 khz - k ? open-circuit reverse voltage transf.ratio i c = 1 ma, v ce = 10 v, f = 1 khz h 12e - 10 -4 8 0.5 short-circuit forward current transf.ratio i c = 1 ma, v ce = 10 v, f = 1 khz 100 h 21e - - 400 open-circuit output admittance i c = 1 ma, v ce = 10 v, f = 1 khz s 40 h 22e - 1 delay time v cc = 3 v, i c = 10 ma, i b1 = 1 ma, v be(off) = 0.5 v - 35 ns - t d rise time v cc = 3 v, i c = 10 ma, i b1 = 1 ma, v be(off) = 0.5 v t r - 35 - t stg - - 200 storage time v cc = 3 v, i c = 10 ma, i b1 = i b2 = 1ma fall time v cc = 3 v, i c = 10 ma, i b1 = i b2 = 1ma t f - - 50
pzt 3904 4 oct-13-1999 switching times turn-on time when switched from + v beoff = 0.5b to - v beon = 10.6v, - i con = 10m a - i bon = 1ma k ? ? 275 +3 v o d.u.t. i v ehn00011 c s 0 +10.6 -0.5 v i (v) t p r t t v 10 input waveform; t r < 1ns; t p = 300 ns = 0.002 delay and rise time test circuit; total shunt capacitance of test jig and connectors c s < 4pf; scope impedance = 10m ? turn-off time i con = 10ma; i bon = 1ma k ? ? 275 +3 v o d.u.t. i v ehn00012 1n916 1n916 c s 0 +10.9 -9.1 v i (v) t p f t t v 10 storage and fall time test circuit; total shunt capacitance of test jig and connectors c s < 4pf; scope impedance = 10m ? input waveform; t r < 1ns; 10 s < t p 500 s = 0.02
pzt 3904 5 oct-13-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy ehp00710 pzt 3904 w 0 050 ?c 150 100 t s a t 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 p tot t a saturation voltage i c = f ( v besat , v cesat ) h fe = 10 ehp00711 pzt 3904 2 0 v be sat c 10 1 10 0 5 v ma 0.2 0.4 0.6 0.8 1.0 1.2 ce sat v , 5 10 2 v be v ce permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00293 pzt 3904 -6 -5 10 0 10 s 0 10 2 10 5 5 10 -4 10 -3 10 -2 10 1 5 d = 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 tot max tot p dc p p t t p = d t t p t dc current gain h fe = f ( i c ) v ce = 10v, normalized ehp00712 pzt 3904 10 10 ma h c 5 fe 10 1 0 10 -1 5 10 10 10 -1 0 1 2 125 ? c 25 ? c -55 ? c 55
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